Develop new stage: Application & trend of WBG semiconductor
開創新格局: 寬能隙功率半導體技術與應用

  • 上課時間:2019/08/06 ~ 2019/08/06
  • 上課地點:集思竹科會議中心2樓達爾文廳(新竹科學園區工業東2路1號)
  • 報名表下載:點此下載
  • 詳細課程資料:
  • 場次費用
    (一般學員)
    費用
    (PIDA 會員)
    費用
    (早鳥優惠)
    早鳥截止日線上報名

     2019/09/06

    NT$4,500NT$3,600NT$4,0502019/08/26

    2019/09/06
    08:30 ~ 09:10

    報到

       /   

     

    2019/09/06
    09:10 ~ 10:00

    GaN-on-Si元件技術與應用

    林昆泉 總經理 / 聯鈞光電竹科分公司  

    課程大綱

    2019/09/06
    10:00 ~ 10:10

    休息時間

       /   

     

    2019/09/06
    10:10 ~ 11:00

    GaN於無線通訊應用與發展

    黃智文 協理 / 穩懋半導體  

    課程大綱

    2019/09/06
    11:00 ~ 11:10

    休息時間

       /   

     

    2019/09/06
    11:10 ~ 12:00

    碳化矽功率元件在電力轉換器應用之發展

    陳文聰 專案經理 / 意法半導體 功率元件技術行銷 

    課程大綱

    2019/09/06
    12:00 ~ 13:15

    午餐

       /   

     

    2019/09/06
    13:15 ~ 14:45

    Silver Sinter Joining and its Reliability for WBG Die-attach

    菅沼 克昭 教授/會長 / 大阪大學 産業科學研究所/日本新世代功率半導体實装技術開發聯盟  

    課程大綱

    2019/09/06
    14:45 ~ 15:00

    休息時間

       /   

     

    2019/09/06
    15:00 ~ 16:30

    Silver Sinter Joining and its Reliability for WBG Die-attach

    菅沼 克昭 教授/會長 / 大阪大學 産業科學研究所/日本新世代功率半導体實装技術開發聯盟  

    課程大綱

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    ◆聯 絡 人:02-23967780 陳小姐 (ext.809) FAX:(02)23968513


    本課程從高功率半導體於車用電子應用開始介紹,再到5G光通訊之應用發展技術,此外,本寬能隙半導體課程,邀請日本學界專家暨日本新世代功率半導體實裝技術開發聯盟Katsuaki 教授/會長來台分享經驗,可讓學員對於寬能隙功率半導體技術應用產業有具體的了解。期望讓學員透過這次課程能有更深刻的對產業技術發展情形了解。

    羅姆半導體 林志昇 副總經理

    穩懋半導體 黃智文
    協理

    意法半導體 陳文聰 功率元件技術行銷專案經理

    大阪大學 産業科學研究所/日本新世代功率半導体實装技術開發聯盟 菅沼 克昭
    教授/會長

    ◆ 主辦單位:
    光電科技工業協進會

    1.氮化鎵材料介紹
    2.氮化鎵磊晶在碳化矽基板技術
    3.高功率的切換式電源供應器應用
    4.結論

    1. The semiconductor technologies trend of wireless communication
    2. The advantage of GaN for wireless application
    3. The market status and forecast for GaN
    4. Future challenges and conclusion

    1. Introduction to SiC components
    2. Power converter technology
    3. Power converter application
    4. Summary

    Power electronics and power LEDs play an important role in the generation-storage-distribution conversion cycle of the electric energy, 5G communication and lighting energy consumption reduction. Wide band gap semiconductors such as SiC and GaN have attracted many researchers recently because both of their excellent energy conversion efficiency, higher power carring capability, and of capability of device downsizing. The performance of interconnection, especially die-attach, has one of the essential technologies for achieving high performance. Among various proposals for next generation die-attach materials and processes, Ag sinter joining with Ag micron/submicron size particles shown is the most promising method for power semiconductors as well as for power LEDs, providing excellent heat-resistance to achieve stable joint structures beyond 200 °C as well as affordability.
    Ag reacts with oxygen in air resulting in low temperature sintering around 200 °C. The microporous joining structure provides high strength as well as excellent heat/electric conductivity. The die-attached devices are stable even at 250 °C in thermal cycling and power cycling. This presentation summarizes the present status of the Ag sinter joining for WBG power electronics.

    Power electronics and power LEDs play an important role in the generation-storage-distribution conversion cycle of the electric energy, 5G communication and lighting energy consumption reduction. Wide band gap semiconductors such as SiC and GaN have attracted many researchers recently because both of their excellent energy conversion efficiency, higher power carring capability, and of capability of device downsizing. The performance of interconnection, especially die-attach, has one of the essential technologies for achieving high performance. Among various proposals for next generation die-attach materials and processes, Ag sinter joining with Ag micron/submicron size particles shown is the most promising method for power semiconductors as well as for power LEDs, providing excellent heat-resistance to achieve stable joint structures beyond 200 °C as well as affordability.
    Ag reacts with oxygen in air resulting in low temperature sintering around 200 °C. The microporous joining structure provides high strength as well as excellent heat/electric conductivity. The die-attached devices are stable even at 250 °C in thermal cycling and power cycling. This presentation summarizes the present status of the Ag sinter joining for WBG power electronics.

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